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Estudio de la influencia de la segregación de indio y del campo eléctrico interno en las propiedades ópticas de heteroestructuras de pozos cuánticos III-V

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dc.contributor.authorCardona Bedoya, Jairo Armandospa
dc.contributor.authorCelemín Sanchez, Huberneyspa
dc.contributor.authorPulzara Mora, Alvarospa
dc.date.accessioned2021-05-31 00:00:00
dc.date.accessioned2022-06-17T20:21:18Z
dc.date.available2021-05-31 00:00:00
dc.date.available2022-06-17T20:21:18Z
dc.date.issued2021-05-31
dc.description.abstractLa segregación superficial de átomos en las aleaciones de semiconductores III-V produce interfaces abruptas y modifica los perfiles del potencial, alternando los estados electrónicos en el pozo cuántico y la energía de emisión en el espectro de fotoluminiscencia. En este trabajo se resuelve mediante serie de potencias la ecuación de Schrödinger considerando un potencial simétrico tipo Cauchy, el cual es suave y decreciente al infinito. Se propone dicho potencial debido a los cambios en el perfil del potencial del pozo cuántico por la segregación de átomos durante el proceso de crecimiento. Se determinó la energía del estado base en función de los parámetros que caracterizan este potencial. Este modelo fue aplicado al caso particular de la segregación de indio en el sistema InGaAs/GaAs. La energía de transición del estado base se calcula a partir de las diferencias de energía entre el electrón y el hueco en función del ancho del pozo. Dichos cálculos están de acuerdo con los picos de energía de fotoluminiscencia reportados. Adicionalmente, la influencia del campo eléctrico debido al efecto piezoeléctrico en la emisión de fotoluminiscencia es estudiada. Para esto se consideró una función de onda variacional de electrones y se calculó la transición de energía del estado base en la región activa de la heteroestructura a partir de las diferencias de energía de electrones y huecos en función del ancho del pozo y del campo eléctrico. Para pozos cuánticos de InGaAs/GaAs la energía base es ajustada dentro de este modelo coincidiendo nuestros cálculos teóricos con la parte experimental.spa
dc.description.abstractThe surface segregation in III-V semiconductor alloys produce abrupt interfaces, and modifies the potential profiles, alternating the electronic states in the quantum well and the emission energy in the photoluminescence spectrum. In this work, the Schrödinger equation is solved by means of a power series considering a Cauchy type symmetrical potential, which is soft and decreasing to infinity. This potential is proposed due to the changes in the potential profile from quantum well by the segregation of atoms during the growth process. The ground state energy was determined according to the parameters that characterize this potential. This model was applied to the particular case of indium segregation in the InGaAs/GaAs system. The ground state energy transition is calculated from the difference in energy between the electron and hole in function of well width. These calculations are in agreement with the reported photoluminescence peak energies. In addition, the influence of the electrical field due to the piezoelectric effect on the photoluminescence emission is studied. For this purpose, an electron variational wavefunction was considered and the ground state energy transition in the active region of the heterostructure was calculated from the difference in energy between the electron and hole in function of well width and the electric field. For InGaAs/GaAs quantum wells, the ground energy is adjusted within this model coinciding our theoretical calculations with the experimental part.eng
dc.format.mimetypeapplication/pdfspa
dc.identifier.doi10.24050/reia.v18i36.1511
dc.identifier.eissn2463-0950
dc.identifier.issn1794-1237
dc.identifier.urihttps://repository.eia.edu.co/handle/11190/5157
dc.identifier.urlhttps://doi.org/10.24050/reia.v18i36.1511
dc.language.isospaspa
dc.publisherFondo Editorial EIA - Universidad EIAspa
dc.relation.bitstreamhttps://revistas.eia.edu.co/index.php/reveia/article/download/1511/1431
dc.relation.citationeditionNúm. 36 , Año 2021 :spa
dc.relation.citationendpage14
dc.relation.citationissue36spa
dc.relation.citationstartpage36020 pp. 1
dc.relation.citationvolume18spa
dc.relation.ispartofjournalRevista EIAspa
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dc.rightsRevista EIA - 2021spa
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessspa
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dc.rights.creativecommonsEsta obra está bajo una licencia internacional Creative Commons Atribución-NoComercial-SinDerivadas 4.0.spa
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0spa
dc.sourcehttps://revistas.eia.edu.co/index.php/reveia/article/view/1511spa
dc.subjectQuantum wellseng
dc.subjectSchrödinger equationeng
dc.subjectSegregationeng
dc.subjectIII-V semiconductorseng
dc.subjectEcuación de Schrödingerspa
dc.subjectPozos cuánticosspa
dc.subjectSemiconductores III-Vspa
dc.subjectSegregaciónspa
dc.titleEstudio de la influencia de la segregación de indio y del campo eléctrico interno en las propiedades ópticas de heteroestructuras de pozos cuánticos III-Vspa
dc.title.translatedStudy of the influence of indium segregation and Internal electric-field on the optical properties of III-V quantum wells heterostructureseng
dc.typeArtículo de revistaspa
dc.typeJournal articleeng
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dc.type.coarversionhttp://purl.org/coar/version/c_970fb48d4fbd8a85spa
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dc.type.driverinfo:eu-repo/semantics/articlespa
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