(2014-05-08) Aristizábal, P. (Parménides); Restrepo-Arango, R. L. (Ricardo León); Ospina-Muñoz, W. A. (Walter Antonio); Duque-Echeverri, C. A. (Carlos Alberto); Ospina Muñoz, Walter Antonio
The use of low dimensional structures is a key technological element in the creation of new quantum
functional devices in the development of the next generation of the electronic, photonic, and spintronic integrated circuits and many other nanoscaled devices that are necessary for the information society of
21st century. One of the most important optical properties is the photoluminescence produced by agents as
impurities and excitons in GaAs quantum wells, wires, and dots with nanometric dimensions under the influence
of electric and magnetic fields and external pressures. The binding energy for the first three excitonic
states in GaAs/Ga1-xA1xAs quantum wells describing the system through quantum theory in the effective mass
approximation and using the variational method is presented.
