Examinando por Autor "Gallego Alzate, Simón"

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    Informe de Semillero de Investigación 2023-1
    Abad, Johnatan; Gallego Alzate, Simón; Gallego Mesa, Farid Alejandro; Avalos Estrada, Mateo; Restrepo Arango, Ricardo León; r
    The electron confinement potential in a GaN/InyGa1−yN/AlxGa1−xN/GaN quantum well is determined by the lattice constant differences of the barrier and well materials. These differences produce self-induced electric fields and self-polarizations in the heterostructure. The dependence of the energy with the concentration of the materials of the well and the barrier is analyzed, in addition their lengths of both are varied. These effects on the inter-subband transitions for the confined states of the electron are studied. The energy values and wave functions are calculated within the effective mass approximation as a function of the coordinates and the enveloping wave function technique is used.